Post-growth high-temperature annealing of sputtered AlN films is a promising approach to realize high-quality AlN templates for deep-ultraviolet light-emitting diode applications. This paper proposes the double-sided sputtering of AlN on double-sided polished sapphire to suppress the wafer bowing caused by high-temperature annealing. Similar to the case of single-sided sputtering, the twist component of the X-ray rocking curve was markedly improved after annealing, yielding rocking curve widths of 256-321 arcsec in (10-12). By varying the backside thickness, the curvature was controlled from -27 km(-1) to 29 km(-1), while a crack-free surface was maintained on the front side of AlN. The experimentally obtained curvature and in-plane stress agreed well with the calculation based on thermal stress analysis in the multilayer system.