We report on the Raman spectroscopy of self-assembled InSb nano-stripes grown on (001) GaSb substrate by molecular beam epitaxy. The nano-stripes have a truncated pyramidal shape with the typical dimension of similar to 150 x 200 x 25 nm(3). Raman spectroscopy is applied to probe the phonon-related properties of the InSb nanostripes. Raman spectroscopy shows slight redshifts of the InSb-related phonon peaks when the excitation wavelength is increased. When a magnetic field is applied, blueshifts of these peaks are observed. Transmission electron microscopy is utilized to relate the structural information of the InSb nano-stripes and their Raman properties.