Journal of Crystal Growth, Vol.507, 77-86, 2019
Physical properties of Ga-Fe-N system relevant for crystallization of GaN - Initial studies
The available data indicate that solubility of nitrogen in the liquid transition metals at high temperatures attains very interesting, high values even for relatively low pressure of N-2 gas. For instance, at p(N2) = 10 MPa (app. 100 bar) and 1600 degrees C, the N solubility in Fe-35%Cr solution is as high as 10 at%, what is significantly above N-solubility in liquid gallium at the typical conditions of high pressure solution growth of GaN (p(N2) = 1.0 GPa, T = 1500 degrees C). Therefore, for pressures required for GaN stability at T > 1300 degrees C (much higher than 100 bar) one can expect N solubility in Fe and its mixtures with Co and Cr on the level of 10-20 wt% which is extremely promising for growth of GaN from liquid solution. The results of some "proof - of - concept" experiments exploring Fe-Ga-N system in both high pressure gas systems of high volume (1.0 GPa, 1600 degrees C, 1-5 dcm(3)) used previously for crystal growth of GaN at the Institute of High Pressure Physics PAS and in the toroid high pressure (8.0 GPa, 2500 degrees C) systems for bulk growth of diamond at the Institute of Superhard Materials in Kyiv are shown and discussed. The results of studies of: melting of Fe and Fe-Ga alloys in contact with nitrogen by DTA, dissolution of nitrogen from gas and solid (GaN) sources as well as physical properties of GaN crystals grown in Fe-Ga-N system are reported.
Keywords:Gallium nitride;Growth from solutions;Iron based N solution;Crystallization at high pressure;DTA at high pressure