The initial growth of CdTe having a thickness of 20-500 nm on (2 1 1) Si substrates was investigated to observe the growth of CdTe at the interface for hetero-epitaxial growth. The dependence of surface morphologies at the initial growth on the II/VI and the growth time was evaluated. The (1 3 3) surface orientation at the interface was shown in CdTe films grown on (2 1 1) Si substrates, which was irrespective of the II/VI. For a relatively high II/VI of 36, hillocks having a (2 1 1) orientation were observed on the underlayer having a (1 3 3) orientation. CdTe having a (2 1 1) orientation was dominant during the growth, due to its lateral coalescence on the underlayer. The dependence of the orientation between (1 3 3) and (2 1 1) CdTe films on (2 1 1) Si substrates on the II/VI was explained by the difference between the step-flow growth on the step and the spontaneous nucleation on the terrace.