In this manuscript, Pt/CH3NH3PbI3 contacts annealing at different temperature are carried out, and the effects of annealing temperature on metal-semiconductor contacts are measured with the model of rectangular transmission line (TLM). It is found that the Pt/CH3NH3PbI3 contact characteristics are complicated as Pt deposited, but at 50 degrees C or higher, it shows good Omhic characteristics and the contact resistivity of Pt/CH3NH3PbI3 is about 3.4x10(-4) Omega.cm(2). As the temperature reached 100 degrees C, the Pt/CH3NH3PbI3 contact features begin to deteriorate due to the decomposition of perovskites proved by the XRD and SEM.