In this paper a novel approach for deriving the current-time profile of the growth of a single hemispherical centre under a mixed kinetic-diffusion-controlled mechanism is conceived. The novelty of the approach lies, first and foremost, on the indisputable assumptions made regarding the boundary conditions imposed on the partial differential equation associated with the spherical diffusion. As a result, the variation of the surface concentration of the depositing ions with time is formulated. Based on this formulation, we have been able to properly characterize the pattern of the growth of a single centre which has been, hitherto, a longstanding problem. The precise portrayal of the results necessitated the exact solutions to be obtained numerically. Approximate closed-form solutions are derived for the rate of growth of a single centre, as well as for the flow of current to the growth centre, provided that the reactions are assumed to be in a steady-state. It is shown that none of the previous works are capable of providing correct solutions even for the steady-state approximation. Solutions based on the steady-state approximation are shown to closely follow the characteristics of the growth of a single centre provided that reaction rates are small, k < 10(-2)cm s(-1). In experimental works associated with higher rates of reaction, > 10(-2) cm s(-1), it is necessary to involve the exact solutions obtained numerically. The clarification of the range of rate constants for which the growth process is controlled (a) by the rate of charge transfer across the interface, (b) by a mix of charge transfer and diffusion, and (c) by only the rate of diffusion of the depositing ions to the interface, remains one of the most valuable contribution of this article.