Transport of indium and gallium is reported in laboratory column experiments using quartz sand as a model porous medium representative of a groundwater system. With increased use of indium and gallium in recent years, mainly in the semiconductor industry, concerns arise regarding their environmental effects. The transport and retention behavior of these two metals were quantified via batch and column experiments, and numerical modeling. The effect of natural organic matter on indium and gallium mobility was studied by addition of humic acid (HA). Measured breakthrough curves from column experiments demonstrated different binding capacities between indium and gallium, stronger for indium, with the presence of HA affecting retention dynamics. For indium, the binding capacity on quartz decreases significantly in the presence of HA, leading to enhanced mobility. In contrast, gallium exhibits slightly higher retention and lower mobility in the presence of HA. In all cases, the binding capacity of gallium to quartz is much weaker than that of indium. These results are consistent with the assumption that indium and gallium form different types of complexes with organic ligands, with gallium complexes appearing more stable than indium complexes. Quantitative modeling confirmed that metal retention is controlled by complex stability.