Several allotropes of antimonene have been demonstrated theoretically, however, the amount of experimental work is far below its theoretical counterpart. Even though single or few layer antimonene films have been exfoliated mechanically or chemically, fabrication of large-scale and high-quality antimonene still relies on vapor deposition or molecular beam epitaxy (MBE). To date, the suppression of semiconductor properties and the challenges in transfer from substrates restrict its broad applications. In this article, we highlight the thermoelectric property of [3-antimonene, and review recent progresses in MBE of antimonene. We propose that hydrogen-passivated germanium (111) is an ideal substrate for both recovering the semiconducting properties and the dry-transfer of graphene. Combined MBE and scanning tunneling microscopy (STM) is powerful tool in phase engineering of antimonene and revealing its structures and properties at atomic scale.