Chemical bath deposition yields SnS thin films of cubic, SnS-CUB, or of orthorhombic, SnS-ORT, crystal structures. They have optical bandgaps (E-g) of 1.7 eV and 1.1 eV, respectively. We present solar cells produced by depositing these SnS thin films on glass substrates coated with F-doped SnO2 (SnO2:F) as transparent conducting oxide (TCO) and CdS film of E-g, 2.6 eV as window layers. Chemical bath for depositing SnS-CUB thin films contained thioacetamide, while that for SnS-ORT contained thiosulfate as the source of sulfide. With SnS-CUB, TCO/CdS(80 nm)/SnS-CUB(400 nm)/C-Ag solar cells showed open circuit voltage (V-oc) of 0.368 V, short circuit current density (J(sc)) of 2.7 mA/cm(2), fill factor (FF) of 33% and conversion efficiency (eta) of 0.33%. Solar cells with CdS (120 nm) SnS-ORT (1200 nm) thin films showed V-oc, 0.336 V; J(sc), 13 mA/cm(2); FF, 25% and eta, 0.96%. For a solar cell with both SnS-CUB and SnS-ORT absorber films: TCO/CdS(80 nm)/SnS-CUB(200 nm)/SnS-ORT( 300 nm)/C-Ag, V-oc was 0.488 V; J(sc), 6.96 mA/cm(2), FF, 41% and eta, 1.38%.