The simulation of solar cell devices is important for the understanding of defect physics and loss mechanisms in real solar cells. On the other hand, voltage dependent admittance spectroscopy delivers essential information for establishing a baseline simulation model of Cu(In,Ga)Se-2 (CIGSe) solar cells. Here we give an explanation for the weak temperature dependence of the N1-signal, the latter being not compatible with a bulk defect or with a simple hole barrier at the Mo back contact. Furthermore, we find a E-d,E-IF- E-V approximate to 0.3 eV deep recombination-active acceptor state at the absorber/buffer interface made of air-light exposed CIGSe absorbers. This gives us the ability to explain the reduction of power conversion efficiency of solar cells made from air-light exposed absorbers. From the voltage dependent capacitance step of this interface defect we can deduce the formerly unknown position of the Fermi level at the hetero junction in equilibrium which is close to mid-gap. Simulation of dark J-V curves allows a refinement of the parameter of this absorber/buffer interface defect, resulting in a defect density of N-d,N-IF approximate to 3.5.10(11) cm(-2) as well as capture cross sections of sigma(n) approximate to 4.10(-16) cm(2) for electrons and sigma(p) approximate to 3.10(-11) cm(2) for holes.