Journal of Crystal Growth, Vol.519, 77-83, 2019
Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field
The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.
Keywords:Computer simulation;Convection;Magnetic field-assisted Czochralski method;Semiconducting silicon