This work reports on growth and characterization of self-assembled InxGa1-xAs quantum dots grown on GaAs (1 00) substrate designed to emit at 1030 nm. All structures were grown by molecular beam epitaxy and investigated by photoluminescence (PL) spectroscopy and atomic force microscopy. The growth parameters, such as the growth temperature, QD layer thickness and indium content were changed systematically. A strong reduction in PL linewidth from 54 meV down to 26 meV measured at 10 K for a single QD layer was achieved as the result of a more uniform QD size distribution. Additionally, a correlation between the linewidth and the temperature dependent wavelength shift of the PL peak was found.