We investigated the growth and characterization of InGaN films with high In content up to 51.9% obtained by MBE MME-growth. Comparing the structural and optical properties of InGaN films grown using common growth method and MME technique, we could acquire the good quality of InGaN sample by MME-growth method with lower dislocation density, better composition uniformity and smoother surface. These experimental results suggest that MME has an enormous potential to promote the quality of high In-content InGaN materials and the development of InGaN-based devices. Besides, further study shows the process of MME growth, the parameters of material growth have opposite effects on the background carrier concentration and carrier mobility.