Chemical resistance of TiO2 and Al2O3 single-layer and multilayer coatings deposited in TiCl4-O-3 and AlCl3-O-3 atomic layer deposition processes on Si(100) and AISI 310 stainless steel was studied. Etching of coatings in hot sulfuric acid revealed marked dependence of the etching rate on the deposition temperature. The dependence was in correlation with changes in chlorine concentration and with the density of Al2O3 films, and with the development of preferential orientation of anatase phase in TiO2. The TiO2 coatings studied markedly reduced the mass loss of AISI 310 samples in etching tests.