Vanadium doped ZnO dip coated thin films were studied by varying vanadium doping percentage between 1-9 wt.%. The X-Ray diffraction (XRD) assures the hexagonal wurtzite phase of ZnO with no secondary phase and slight variations in lattice parameters is recorded. Fourier transform infrared spectroscopy (FTIR) also confirms the presence of vanadium in ZnO. Decrease in band gap takes place from 3.14 to 2.99 eV. The decrease in band gap stem from the difference in the band gap of V2O5 (2.3 eV) and ZnO (3.37 eV). Scanning electron microscopy (SEM) displays agglomeration of particles on the surface of thin films. SEM micrographs revealed the polycrystalline nature of thin films which is also confirmed by XRD. The highest zone of inhibition against P. aeruginosa is found for 9% V while 7% V has least zone of inhibition for S. Aureus. Transition metal doped ZnO can be used in replacement of antibiotics.