Benefiting from the atomically thin body thickness of two-dimensional (2D) materials, field-effect transistors with 2D semiconductor as active channel enables enhanced electrostatic gate coupling for next-generation nanoelectronics. On the other hand, due to the atomic thin body and delicate lattice of 2D material, high-quality interfaces are essential to preserve the superior performance of the transistors, which is recognized as a key challenge within dangling-bond free 2D surface. Herein, we review and highlight recent state-of-the-art advances on interface engineering of high-performance 2D materials transistors, including contact engineering, dielectric engineering, surface charge transfer doping engineering, and intercalation engineering, and outlook the opportunities and challenges for developing 2D materials for low-power, high-performance microelectronics. (C) 2019 Elsevier Ltd. All rights reserved.