High capital expenditures associated with manufacturing thin silicon wafers make it difficult for the industry to scale up and prevent novel technologies from entering the market. Thin wafers fail largely due to breakage during solar cell processing and handling. One of the root causes for breakage is sub-mm edge cracks in the silicon wafer, and these cracks cannot be reliably detected by most commercially-available crack detection tools. In this work, we first investigate the correlation between wafer thickness and critical crack length, and explain the importance of detecting sub-500-mu m edge cracks as the wafer thickness is reduced. Secondly, we extend our previous work of micro-crack detection to demonstrate an edge illumination technique using a near-infrared laser to image edge cracks less than 500 mu m in length in multicrystalline silicon. Thirdly, we investigate two fundamental edge illumination mechanisms based on dark-field imaging; namely, direct and vicinal illumination. We will then compare these methods to a state-of-the-art rear illumination method. The advantages and disadvantages of both illumination methods are presented and provide an in-depth analysis of light-crack interaction. In particular, we find that the robustness of vicinal illumination is due to diffuse reflectance. The diffuse reflectance has less dependence on crack configurations, while direct illumination has more dependence on the crack configurations because it utilizes specular reflectance. Our results show that our proposed prototype can detect sub-mm edge cracks in multicrystalline silicon wafers, which is an important step in enabling thin silicon wafer manufacturing.