Resistive random-access memory (RRAM) with a Ni/SiNx/a-Si/p(+)-Si structure is presented. In contrast to RRAM devices based on high-k materials, the proposed Si-based device is more attractive and promising because the SiNx and a-Si layers have full compatibility with conventional complementary metal-oxidesemiconductor technology. The proposed device is compared to a control device with a single layer of SiNx. A conduction path containing Si dangling bonds (traps) can be generated in both the SiNx and a-Si layers. The conduction path in each layer can be controlled by the compliance current during the forming process. For high compliance current mode, the double-layer device has a higher ON/OFF ratio (similar to 10(4)) and lower leakage current (similar to 10(-9) A) than the single-layer device. For low compliance current mode, better non-linearity (similar to 10(3)) can be obtained when a 1/2 read bias scheme is applied to the cross-point array.