In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn3N2) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10(4) and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm(2)/Vs and 1 cm(2)/Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn3N2 TFTs, reported for first time in this work.