Semiconducting and luminescent thin films could be served as the emitting layer in electroluminescent devices. In this work, Eu3+-doped yttrium vanadium oxide (YVO4) luminescent thin films were directly deposited by a solution processing method, and they were annealed at a low temperature of 400 degrees C. Such low annealed temperature is compatible with commonly used transparent conducive electrodes, such as fin-doped indium oxide and fluorine-doped fin oxide. In addition, the luminescent thin films have a band gap of 3.94 eV and an absolute photoluminescence quantum yield of 23%. These results revealed that Eu3+-doped YVO4 luminescent thin films have a high potential in electroluminescent devices.