화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Polymer(Korea), Vol.43, No.4, 602-611, July, 2019
DOI10.7317/pk.2019.43.4.602  Export Citation
UVO 처리 및 습식 식각을 통한 PS-b-PMMA 블록 공중합체의 형태학적 조절 및 규칙성
Morphology Tuning and Ordering of PS-b-PMMA Block Copolymer via UVO Treatment and Wet Etching
배진주, 이덕현1, 이민형2, 김동현1, †, 변명환†
  • 계명대학교 공과대학 재료공학과
  • 1한국생산기술연구원 울산지역본부
  • 2한국생산기술연구원 뿌리산업기술연구소 표면처리그룹
Jinju Bae, Duck Hyun Lee1, Min Hyung Lee2, Dong-Hyun Kim1, †, and Myunghwan Byun†
  • Department of Materials Engineering, Keimyung University, Daegu 42601, Korea
  • 1Korea Institute of Industrial Technology (KITECH), Ulsan 44413, Korea
  • 2Surface R&D Group, Korea Institute of Industrial Technology (KITECH), Incheon 21999, Korea
E-mail:,
초록
Bottom-up 리소그래피 방식 중 하나인 블록 공중합체 직접 자기조립 기술은 비용 면에서 효율적이며 단순한 공정으로 인해 top-down 방식의 리소그래피를 보완할 수 있는 잠재력을 제공한다. 상 분리를 통해 자기 조립되는 블록 공중합체는 나노 템플릿을 제작하여 메모리 디바이스와 같은 계속해서 발전되는 소형장치를 제조하는데 응용될 수 있다. 본 연구에서는 PS-b-PMMA 블록 공중합체의 직접 자기 조립 성질을 통하여 나노미터 규모의 지문 형태와 같은 대칭성을 가진 라멜라 패턴을 제작하였다. 랜덤 공중합체를 이용하여 표면의 성질을 제어함으로써 박막의 수직 배향을 유도했다. 블록 공중합체 박막의 두께를 변화시키고 어닐링 공정조건을 다양하게 함으로써 블록 공중합체 패턴의 형태학적 변화를 관찰하였다. 나노트렌치 구조를 형성하기 위해 ultra-violet ozone(UVO) 노출 및 아세트산 에칭을 통해 PMMA를 선택적으로 제거하였으며, 원하는 형태와 두께의 박막을 제조하기 위해 에칭 시간의 제어를 실시하였다.
Among bottom-up assemblies, directed self-assembly of block copolymer offers the potential to complement the top-down lithography due to its cost effectiveness and simple process. Block copolymer nanostructures self-organized through their phase separation can be applied to serve as passivation layers or nanoscale templates for the production of small devices which continuously evolve such as memory devices. In this study, lamellar patterns like finger-print at the nanometer scale were fabricated via directed self-assembly of symmetric PS-b-PMMA copolymer. The vertical orientation of the thin film was induced by controlling the properties of the surface using the random copolymer. First, morphological evolution was intensively observed by varying the thickness of the block copolymer thin film and by varying the annealing process conditions leading to nanostructure formation of the microdomains. Finally, the PMMA block was selectively removed by ultra-violet ozone (UVO) and acetic acid etching. Etching time was then controlled to produce the thin film with desired morphology and thickness.
Keywords:block copolymer;self-assembly;lamella;annealing;etching
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