The stability of the Nitrogen-polar (000-1) surface of single-crystal bulk GaN substrates is studied for layers grown by plasma-assisted molecular beam epitaxy (PAMBE) in Nitrogen-rich conditions at 730 degrees C. It is shown that smooth GaN layers with parallel atomic steps are obtained for substrates when the surface crystal miscut angle is larger than 2 degrees, revealing a highly stable epitaxial growth regime on single crystals. A step meandering pattern is observed on layers grown on lower miscut angle substrates. The meandering periodicity is found to have an inverse dependence on growth rate and miscut angle. This is opposite to what is observed for epitaxy on the Ga-polar surface. Combining analytic modeling and kinetic Monte Carlo simulations, it is shown that the existence of an Ehrlich-Schwoebel Barrier (ESB) in the PAMBE growth of GaN in nitrogen-rich conditions on (000-1) GaN reproduces the experimentally observed periodicity of step meandering. Assuming that ESB height depends on interactions between diffusing adatoms, all experimental phenomena are reproduced.