Single crystal pseudo-wurtzite ZnSnN2 films were grown successful for the first time with [11 (2) over bar0] growth direction. The ZnSnN2 films were grown as single crystal on sapphire substrate using ZnO buffers. There was no formation of an orthorhombic structure detected in all the samples. The epitaxy relationship found in the grown single crystal ZnSnN2 films was: [1 (1) over bar 00] ZnSnN2//[1 (1) over bar 00] ZnO//[10 (1) over bar0] Al2O3 and [0001] ZnSnN2//[0001] ZnO//[1 (1) over bar 01] Al2O3. By changing the films' composition, the optical bandgap of the single crystal wurtzite ZnSnN2 films were tuned from 1.6 to 2.0 eV. The densities and mobilities of the grown ZnSnN2 films were investigated and compared. The successful growth of non-polar ZnSnN(2 )films on commercial sapphire substrate will promote study in this material and related device fabrication.