Using in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy, we have investigated the influence Si deposition on the step bunching on the Si(0 0 1) surface under direct current (DC) sample heating in 950-1150 degrees C temperature range. During sublimation time scaling exponents of the average distance between the bunches are about 0.3 for both step-up and step-down DC directions at all temperatures. We have found that the shape of the step bunches becomes straight, and the number of step pairs between the bunches increases at a temperature above 1050 degrees C for fixed annealing time. We have established that the step bunching rate during step-up DC heating is characterized by 0.24 eV effective activation energy under sublimation conditions. The mean bunch separation changes non-monotonically when net growth rate (R) rises and it decreases as R-1/2 near equilibrium conditions.