Previously, we found 3C-SiC films favor to grow in orientation on Si (110) (). However, epitaxial growth of thick -3C-SiC is still a big challenge. In this study, thick 3C-SiC (110) epitaxial films were prepared on Si (110) substrate by laser chemical vapor deposition (LCVD) using hexamethyldisilane (HMDS) in H-2 atmosphere. The investigation of growth mechanism showed that the laser of LCVD played an important role during the depositions. Observation by high-resolution transmission electron microscopy (HRTEM) revealed that the interface of 3C-SiC (110)/Si (110) exhibited rough texture at atomic level. The atomic roughness on Si (110) surface could be a key factor for 3C-SiC (110) nucleation. The growth of thick 3C-SiC (110) epitaxial films could be very promising for new development in power electronics applications.