The spatial distribution of device performance parameters of solar cells provides important insight into their operation, including the type and magnitude of conversion losses and potential areas of improvement. In most of the procedures used to create these parameter images, a uniform (i.e., global) short-circuit current density (J(sc)) is usually assumed. However, J(sc) is known to vary over the surface of a solar cell, especially in polycrystalline absorber materials like multicrystalline silicon. In this work, a high speed quantum efficiency measurement rastered over the surface of a solar cell is used to obtain images of J(sc). These J(sc) images are then used to calculate images of series resistance, dark saturation current density, fill factor, and conversion efficiency. Comparisons are made between the images created with a global J(sc) and with the spatially-resolved J(sc). Negligible variation is observed in the series resistance and dark saturation current density images, but a drastic change is observed in the efficiency images between these two methods.