GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology

De Conti L; Bedecarrats T; Cristoloveanu S; Vinet M; Galy P

Solid-State Electronics, Vol.159, 90-98, 2019

DOI10.1016/j.sse.2019.03.042 Export Citation

GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology

De Conti L, Bedecarrats T, Cristoloveanu S, Vinet M, Galy P

GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28 nm node ultra-thin film UTBB FD-SOI high-k metal gate CMOS technology. The anode current and voltage were measured and simulated for a high number of variants with different connectivity conditions on the terminals. The devices are reconfigurable and promising for high voltage ESD protection applications.

Keywords:Electrostatic discharges;ESD;FD-SOI;GDNMOS;GDBIMOS;Gated diode;MOSFET;BIMOS