Influence of annealing temperature on the microstructural and electrical properties of sputtered N thin films was investigated. N thin films were sputtered on oxidized Si substrates and Al2O3 ceramics respectively and then annealed at different temperature for different time. The microstructures and electrical properties of N thin-film resistances were investigated. N thin films on oxidized Si substrates and Al2O3 ceramics showed different temperature dependent resistance behaviors and crystal growth preference. The temperature coefficient of resistance (TCR) of Al2O3-based resistances was more stable and less affected than the SiO2-based ones, and TCR of SiO2-based ones exhibited continuous increase after two more hours annealing. In addition, the factors that affected TCR were discussed.