화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.29, No.9, 567-577, September, 2019
DOI10.3740/MRSK.2019.29.9.567  Export Citation
원자층 증착법을 이용한 AlN 박막의 성장 및 응용 동향
Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review
윤희주, 김호경1, 최병준†
  • 서울과학기술대학교 신소재공학과
  • 1서울과학기술대학교 안경광학과
Hee Ju Yun, Hogyoung Kim1, and Byung Joon Choi†
  • Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
  • 1Department of Visual Optics, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
E-mail:
Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of 150~550 oC with alkyl/amine or chloride precursors. Due to the low reactivity with NH3 reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.
Keywords:AlN film;thermal atomic layer deposition;plasma enhanced atomic layer deposition;nitride electronics
  1. Choi BJ, Yang JJ, Zhang MX, Norris KJ, Ohlberg DAA, Kobayashi NP, Medeiros-Ribeiro G, Williams RS, Appl. Phys. A-Mater. Sci. Process., 109, 1 (2012)
  2. Elers KE, Ritala M, Leskela M, Johansson LS, Le J. Phys. IV, 05, C5 (1995)
  3. Ozgit C, Donmez I, Alevli M, Biyikli N, Thin Solid Films, 520(7), 2750 (2012)
  4. Riihela D, Ritala M, Matero R, Leskela M, Jokinen J, Haussalo P, Chem. Vap. Depos., 2, 277 (1996)
  5. Shin S, Ham G, Jeon H, Park J, Jang W, Jeon H, Korean J. Mater. Res., 23(8), 405 (2013)
  6. George SM, Chem. Rev., 110(1), 111 (2010)
  7. Banerjee S, Aarnink AAI, van de Kruijs R, Kovalgin AY, Schmitz J, Phys. Status Solidi C, 12, 1036 (2015)
  8. Van Bui H, Wiggers FB, Gupta A, Nguyen MD, Aarnink AIA, de Jong MP, Kovalgin AY, J. Vac. Sci. Technol. A, 33, 01A111 (2015)
  9. Johnson RW, Hultqvist A, Bent SF, Mater. Today, 17, 236 (2014)
  10. Miikkulainen V, Leskela M, Ritala M, Puurunen RL, J. Appl. Phys., 113 (2013)
  11. Van Bui H, Nguyen MD, Wiggers FB, Aarnink AAI, de Jong MP, Kovalgin AY, ECS J. Solid State Sci. Technol., 3, P101 (2014)
  12. Badylevich M, Shamuilia S, Afanas’Ev VV, Stesmans A, Fedorenko YG, Zhao C, J. Appl. Phys., 104 (2008)
  13. Liu X, Ramanathan S, Lee E, Seidel TE, MRS Proc., 811, D1.9 (2004)
  14. Jokinen J, Haussalo P, Keinonen J, Ritala M, Riihela D, Leskela M, Thin Solid Films, 289(1-2), 159 (1996)
  15. Reid KG, Dip A, Sasaki S, Triyoso D, Samavedam S, Gilmer D, Gondran CFH, Thin Solid Films, 517(8), 2712 (2009)
  16. Liu G, Deguns E, Lecordier L, Sundaram G, Becker J, ECS Trans., 41, 219 (2011)
  17. Kim KH, Gordon RG, Ritenour A, Antoniadis DA, Appl. Phys. Lett., 90 (2007)
  18. Abdulagatov AI, Ramazanov SM, Dallaev RS, Murliev EK, Palchaev DK, Rabadanov MK, Abdulagatov IM, Russ. Microelectron., 47, 118 (2018)
  19. Abdulagatov AI, Amashaev RR, Ashurbekova KN, Ashurbekova KN, Rabadanov MK, Abdulagatov IM, Russ. J. Gen. Chem., 88, 1699 (2018)
  20. Chen Z, Zhu Z, Harkonen K, Salmi E, J. Vac. Sci. Technol. A, 37, 020925 (2019)
  21. Leskela M, Mattinen M, Ritala M, J. Vac. Sci. Technol. B, 37, 030801 (2019)
  22. Huang S, Jiang Q, Yang S, Zhou C, Chen KJ, IEEE Electron Device Lett., 33, 516 (2012)
  23. Kim KH, Kwak NW, Lee SH, Electron. Mater. Lett., 5, 83 (2009)
  24. Altuntas H, Bayrak T, Electron. Mater. Lett., 13, 114 (2017)
  25. Alevli M, Ozgit C, Donmez I, Biyikli N, J. Cryst. Growth, 335(1), 51 (2011)
  26. Alevli M, Ozgit C, Donmez I, Biyikli N, Phys. Status Solidi Appl. Mater. Sci., 209, 266 (2012)
  27. Bosund M, Sajavaara T, Laitinen M, Huhtio T, Putkonen M, Airaksinen VM, Lipsanen H, Appl. Surf. Sci., 257(17), 7827 (2011)
  28. Mattila P, Bosund M, Huhtio T, Lipsanen H, Sopanen M, J. Appl. Phys., 111, 063511 (2012)
  29. Ozgit-Akgun C, Goldenberg E, Okyay AK, Biyikli N, J. Mater. Chem. C, 2, 2123 (2014)
  30. Liu C, Liu S, Huang S, Chen KJ, IEEE Electron Device Lett., 34, 1106 (2013)
  31. Schiliro E, Giannazzo F, Bongiorno C, Di Franco S, et al., Mater. Sci. Semicond. Process, 97, 35 (2019)
  32. Goerke S, Ziegler M, Ihring A, Dellith J, Undisz A, Diegel M, Anders S, Huebner U, Rettenmayr M, Meyer HG, Appl. Surf. Sci., 338, 35 (2015)
  33. Lee YJ, J. Cryst. Growth, 266(4), 568 (2004)
  34. Rontu V, Sippola P, Broas M, Ross G, Sajavaara T, Lipsanen H, Paulasto-Krockel M, Franssila S, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., 36, 021508 (2018)
  35. Lee YJ, Kang SW, Thin Solid Films, 446(2), 227 (2004)
  36. Dendooven J, Deduytsche D, Musschoot J, Vanmeirhaeghe RL, Detavernier C, J. Electrochem. Soc., 157(4), G111 (2010)
  37. Lee MS, Wu S, Jhong SB, Chen KH, Liu KT, J. Nanomater., 2014, 1 (2014)
  38. Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, Xing H, IEEE Electron Device Lett., 33, 988 (2012)
  39. Chen KJ, Huang S, Semicond. Sci. Technol., 28 (2013)
  40. Kim H, Yun HJ, Choi BJ, Optik, 184, 527 (2019)
  41. Kim H, Kwon Y, Choi BJ, Thin Solid Films, 670, 41 (2019)
  42. Kim H, Kim ND, An SC, Yoon HJ, Choi BJ,, Vacuum, 159, 379 (2019)
  43. Kim H, Yoon HJ, Choi BJ, Nanoscale Res. Lett., 13 (2018)
  44. Kim H, Kim ND, An SC, Yoon HJ, Choi BJ, Trans. Electr. Electron. Mater., 19, 235 (2018)
  45. Kim H, Kim ND, An SC, Choi BJ, J. Mater. Sci. Mater. Electron., 29, 17508 (2018)
  46. Baines Y, Buckley J, Biscarrat J, Garnier G, Charles M, Vandendaele W, Gillot C, Plissonnier M, Sci. Rep., 7 (2017)
  47. Medjdoub F, Zegaoui M, Ducatteau D, Rolland N, Rolland PA, IEEE Electron Device Lett., 32, 874 (2011)
  48. Yun HJ, Choi BJ, Ceram. Int., 45, 16311 (2019)
  49. Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li ZY, Williams RS, Yang JJ, Adv. Funct. Mater., 26(29), 5290 (2016)
  50. Kim HD, An HM, Seo Y, Kim TG, IEEE Electron Device Lett., 32, 1125 (2011)
  51. Kim HD, An HM, Lee EB, Kim TG, IEEE Trans. Electron Devices, 58, 3566 (2011)
  52. Sadeghpour S, Ceyssens F, Puers R, J. Phys. Conference Ser., 757 (2016)
  53. Kim Y, Kim MS, Yun HJ, Ryu SY, Choi BJ, Ceram. Int., 44, 17447 (2018)