A novel "electron reduction" initiated by dielectric barrier discharge (DBD) plasma, has been developed and employed for the reduction of graphene oxide. The "electron reduction" is operated at atmospheric pressure and relatively low gas temperature. The monolayer-reduced GO can be acquired using DBD plasma. The high energy electrons break C-O and C-C bonds to form CO2, CO within nanoseconds is believed to be the mechanism for reduction of GO. The reduction degree of GO is characterized by XRD, TG, XPS, and C-13 NMR. The AFM shows reduced GO by DBD (rGO-D) with a thickness of (similar to)0.36 nm. Compared with the rGO prepared by using the traditional rapid heating process, the oxygen-containing functional groups of GO reduced by DBD are fewer. The reduction degree and the restoration of pi network within the carbon structure of the former are also greater than those of traditional rapid heating process. Thus, the DBD-prepared rGO shows a higher electrochemical activity in the K3Fe(CN)(6) system, as compared with it by using the rapid heating process. GO reduction with DBD may show potential for the fast, energy-saving, and large-scale preparation of reduced GO.