Ba(Zr, Ti)O-3 [BZT] thin films were prepared for potential use as a decoupling capacitor for a multichip module (MCM). The crystal structure of BZT thin films on Pt(100)/MgO(100) and MgO(100) deposited from Ba(Zr0.2Ti0.8)O-3 powder target has a perovskite structure and is strongly (100) oriented. The crystal structure of BZT thin films on Pt(lll) coated substrates differ from that of Pt(100)/MgO(100) and MgO(100) substrates. The degree of preferred (100) orientation on Pt(111)/SiO2/Si increased with increasing deposition temperature. We obtained a maximum dielectric constant of 150 at 600 degrees C deposition. The loss tangent, leakage current and temperature dependence of capacitance of these BZT thin films were very small.