멜라민 화합물을 이용한 산화 그래핀 도핑 및 특성 평가

김수민; 김현; 김소양; 한종훈; Sumin Kim; Hyun Kim; So Yang Kim; Jong Hun Han

Korean Journal of Materials Research, Vol.29, No.11, 677-683, November, 2019

DOI10.3740/MRSK.2019.29.11.677 Export Citation

멜라민 화합물을 이용한 산화 그래핀 도핑 및 특성 평가

Synthesis of Nitrogen-Doped Graphene by Thermal Annealing Graphene Oxide with Melamine Compounds

김수민, 김현, 김소양, 한종훈^{1, †}

전남대학교 일반대학원 신화학소재공학과
¹전남대학교 공과대학 화학공학부 및 광전자융합연구소

Sumin Kim, Hyun Kim, So Yang Kim, and Jong Hun Han^{1, †}

Department of Advanced Chemicals & Engineering, Graduate School Chonnam National University, Gwangju 61186, Republic of Korea
¹School of Chemical Engineering, Chonnam National University, Gwangju 61186, Republic of Korea

E-mail:

In this paper, nitrogen-doped reduced graphene oxide(rGO) is obtained by thermal annealing of nitrogen-containing compounds and graphene oxide (GO) manufactured by modified Hummers' method. We use melamine as a nitrogen-containing compound and treat GO thermally with melamine at over 800 ~ 1,000 oC and 1 ~ 3 hr under Ar atmosphere. The electrical conductivity of doped rGO is measured by 4-point probe method. As a result, nitrogen contents on rGO are found to be in the range of 2.5 to 12.5 at% depending on the doping conditions after thermal annealing. The main doping site on graphene oxide is changed from pyridinic-N and pyrrolinic N to the graphitic site as the heat treatment temperature increases. The electrical conductivity of doped rGO increases as the N doping content increases. As the thermal treatment time increases, the change of both total doping contents and doping sites is slight and the surface resistance is remarkably reduced, which is caused by healing effects of doped graphene oxide at high temperature.

Keywords:graphene;doping;nitrogen;thermal annealing;n-doped

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[3] Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK, Proc. Natl. Acad. Sci. U. S. A., 102, 10451 (2005)

[4] Schedin F, Geim AK, Morozov SV, Hill EW, Blake P, Katsnelson MI, Novoselov KS, Nat. Mater., 6(9), 652 (2007)

[5] Zhang Y, Small JP, Pontius WV, Kima P, Appl. Phys. Lett., 86, 073104 (2005)

[6] Mortensen H, Kusano Y, Leipold F, Rozlosnik N, Kingshott P, Goutianos S, Sørensen BF, Stenum B, Bindslev H, Jpn. J. Appl. Phys., 45, 8506 (2006)

[7] Jung I, Dikin DA, Piner RD, Ruoff RS, Nano Lett., 8, 4283 (2008)

[8] Schniepp HC, Li JL, McAllister MJ, Sai H, Herrera-Alonso M, Adamson DH, Prud'homme RK, Car R, Saville DA, Aksay IA, J. Phys. Chem. B, 110(17), 8535 (2006)

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[12] Li XS, Magnuson CW, Venugopal A, Tromp RM, Hannon JB, Vogel EM, Colombo L, Ruoff RS, J. Am. Chem. Soc., 133(9), 2816 (2011)

[13] Mattevi C, Kim H, Chhowalla M, J. Mater. Chem., 21, 3324 (2011)

[14] Sutter PW, Flege JI, Sutter EA, Nat. Mater., 7(5), 406 (2008)

[15] Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov AN, Conrad EH, First PN, de Heer WA, Science, 312, 1191 (2006)

[16] Panchakarla LS, Subrahmanyam KS, Saha SK, Govindaraj A, Krishnamurthy HR, Waghmare UV, Rao CNR, Adv. Mater., 21, 2726 (2009)

[17] Guo B, Fang L, Zhang B, Gong JR, Insciences J., 1, 80 (2011)

[18] Wang X, Cao XQ, Bourgeois L, Guan H, Chen SM, Zhong YT, Tang DM, Li HQ, Zhai TY, Li L, Bando Y, Golberg D, Adv. Funct. Mater., 22(13), 2682 (2012)

[19] Kasry A, Kuroda MA, Martyna GJ, Tulevski GS, Bol AA, ACS Nano, 4, 3839 (2010)

[20] Wei D, Liu Y, Wang Y, Zhang H, Huang L, Yu G, Nano Lett., 9, 1752 (2009)

[21] Deng D, Pan X, Yu L, Cui Y, Jiang Y, Qi J, Li WX, Fu Q, Ma X, Xue Q, Sun G, Bao X, Chem. Mater., 23, 1188 (2011)

[22] Wang Y, Shao Y, Matson DW, Li J, Lin Y, ACS Nano, 4, 1790 (2010)

[23] Zhou SY, Siegel DA, Fedorov AV, Lanzara A, Phys. Rev. Lett., 101, 086402 (2008)

[24] Chen W, Chen S, Qi DC, Gao XY, Wee ATS, J. Am. Chem. Soc., 129(34), 10418 (2007)

[25] Soo LT, Loh KS, Mohamad AB, Daud WRW, Wong WY, J. Alloy. Compd., 677, 112 (2016)

[26] Lin Z, Waller G, Liu Y, Liu M, Wong CP, Adv. Eng. Mater., 2, 884 (2012)

[27] Lin Z, Song MK, Ding Y, Liu Y, Liu M, Wong CP, Phys. Chem. Chem. Phys., 14, 3381 (2012)

[28] Pei S, Cheng HM, Carbon, 50, 3210 (2012)

[29] Costa L, Camino G, J. Therm. Anal., 34, 423 (1988)

[30] Sheng ZH, Shao L, Chen JJ, Bao WJ, Wang FB, Xia XH, Acs Nano, 5, 4350 (2011)

[31] Geng DS, Yang SL, Zhang Y, Yang JL, Liu J, Li RY, Sham TK, Sun XL, Ye SY, Knights S, Appl. Surf. Sci., 257(21), 9193 (2011)

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[33] Jeong HM, Lee JW, Shin WH, Choi YJ, Shin HJ, Kang JK, Choi JW, Nano Lett., 11, 2472 (2011)