We have fabricated ZnxSn1-xSe (ZTSe) films for the first time. Samples were fabricated by chemical molecular beam deposition method at atmospheric pressure in hydrogen flow. ZnSe and SnSe powders with 99.999% purity were used as precursors. The temperature of precursors varied in the range of (850-950) degrees C. Films were deposited at substrate temperature of (500-600) degrees C. Borosilicate glass was used as a substrate. We have studied ZTSe films by EDS, XRD and SEM. The samples had orthorhombic and cubic structures depending on composition. Results of EDS have shown that stoichiometric composition of samples moved to ZnSe side by increasing with substrate temperature. SEM pictures have shown that samples had polycrystalline structure. The grain size varied in the range of (2-15) mu m. The grain size of samples increased from (2-5) mu m to (15-20) mu m for substrate temperatures of 500 degrees C and 550 degrees C respectively. While, at a substrate temperature of 600 degrees C the grain size decreased up to (3-5) mu m, possibly, because of increasing of ZnSe content. XRD analysis has shown that samples have ZnSe, SnSe, Se and Sn phases. The band gap of samples varied in the range of 1.0-2.0 eV depending on the film compositions. An inversion of the conductivity type was found: samples fabricated at 500 degrees C and 550 degrees C performed of p-type conductivity; while samples fabricated at 600 degrees C showed n-type conductivity.