A study of the SC1 (NH4OH:H2O2:H2O) solution for use in both resist particulate removal and in selective wet etching of certain films is reported. The ratio of SC1 solution used for the following tests is 1:2:10. Etch rates for films such as tetraethylorthosilicate oxide, borophosphosilicate glass, nitride, doped polysilicon, and thermal oxide are investigated. Film composition, age of chemicals used, temperature, and composition of chemicals are factors which can influence etch rates of these films.