TiN films were reactively deposited from a Ti nozzle by an RF plasma jet. At power >100 W the optical emission from Ti measured in the plasma jet channel is significantly higher for 0.4% content of nitrogen in the argon than for pure argon. Extreme enhancement of the TiN deposition rate at 0.4% content of nitrogen with respect to Ti film growth rate was observed. At 180 W the film growth rate of TiN of 1850 nm/min was achieved, which is 30 times higher than the deposition rate of Ti at similar deposition conditions.