Several high temperature-metallization systems, based on Ti and W ohmic contacts have been examined for n-type beta-SiC. Contact resistivities of almost-equal-to 10(-4) OMEGA-cm2 were measured on as deposited films. The Ti/TiN/Pt/Au metallizations exhibited limited deterioration in the electrical properties after 20 h at 650-degrees-C in air These contacts have the potential for utilization in short-lifetime devices in the temperature range of 600 to 700-degrees-C and for long-term operation at temperatures of 400 to 500-degrees-C.