Journal of the Electrochemical Society, Vol.141, No.3, 771-777, 1994
Morphological Structure of Silicon-Carbide, Chemically Vapor-Deposited on Titanium Carbide, Using Ethylene, Carbon-Tetrachloride, and Silicon Tetrachloride
The morphologies of SiC deposited onto TiC(x) substrates by pyrolysis of C2H4 and SiCl4, and CCl4 and SiCl4, in diluent Ar, He, H-2, Ar + H-2, and He + H-2 atomospheres are presented. The morphologies were obtained as a function of diluent mixture, diluent to reactant (D:R) ratio, and TiC(x) substrate temperature (T(s)). Deposition from C2H4 and SiCl4 was studied at 1100-degrees-C less-than-or-equal-to T(s) less-than-or-equal-to 1450-degrees-C; where, beta-SiC epilayers were deposited only in 100% diluent He. Epitaxial growth of beta-SiC from CCl4 was not observed under any growth conditions in the T(s) range over which SiC could be deposited (1100-degrees-C less-than-or-equal-to T(s) less-than-or-equal-to 1500-degrees-C).