A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SiC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 angstrom/min for n-SiC and 2.2 mum/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.