The effects of steam pressure, velocity, and composition on SiC oxidation kinetics were studied. Pressure effects were tested at 1200 degrees C from 0.1 to 1.4 MPa at a steam velocity of 0.25 cm/s. Velocity effects were tested in two furnaces at 0.45 MPa, 1200 degrees C and 0.1 MPa, 1600 degrees C with velocities ranging from 0.25 to 137 cm/s. Steam composition was altered by changing the reaction vessel material. Oxide morphology and composition were determined using optical and electron microscopy, and X-ray diffraction. Porous oxides were observed whenever structural SiC from the reaction vessel saturated the steam with volatilized silica, H-2, and CO. Oxidation kinetics were calculated by the change in SiC thickness. The steam velocity/recession rate followed a power-law relationship of similar to 0.35 while the steam pressure/recession rate followed a power-law relationship of similar to 1.78.