A method for advanced manufacturing of silicon carbide offering complete freedom in geometric complexity in the three-dimensional space is described. The method combines binder jet printing and chemical vapor infiltration in a process capable of yielding a high-purity, fully crystalline ceramic-attributes essential for ideal performance in very high-temperature applications or in the presence of displacement damage. Thermal conductivity and characteristic equibiaxial flexural strength of the resulting monolithic SiC at room temperature are 37 W center dot(m center dot K)(-1) and 297 MPa, respectively.