Silver thin films have been deposited on various self-biased substrates by radio frequency sputteering of a magnetron silver target in pure argon plasma using a load-lock deposition equipment. The properties of these metal films were investigated as functions of the negative self-bias voltage applied to substrates. The composition and crystallographic structure of silver films were determined by Rutherford backscattering spectroscopy and x-ray diffraction techniques, respectively. Pure silver films having electrical resistivities nearly equal to the bulk resistivity were produced on substrates at the floating potential. Argon atoms were incorporated in silver films deposited on biased substrates. The residual stresses in the films and Knoop microhardness were determined as functions of the bias voltage of substrates. The probability of low energy argon ion entrapment inside metal crystallites was estimated to be negligible from a theoretical treatment and calculation based on the hard-sphere model. The electrical resistivity of films was interpreted from the microstructure and concentration of argon atoms in the films with a model based on the electron scattering phenomena at grain boundaries. The argon atoms may be trapped in the grain boundaries rather than inside metal crystallites. The effects of the low energy ion bombardment during growth on the composition, microstructure, and physical properties of RF sputter-deposited silver films on negatively self-biased substrates are analyzed and discussed.