Based on the effusive flux model developed in Part I (the preceding article), various effects of flow and thermal fields are investigated numerically for deposition from SiCl4 dilutely mixed in hydrogen passing through a rectangular reactor. Generation and transport of HCl and SiCl2 near the deposition surface is examined in detail. Thermofluid effects on deposition are presented in terms of such nondimensional parameters as the inverse Graetz number and the Rayleigh number.