This work addresses effects of deposition and ion scattering on profiles of submicron contacts, vias, and trenches in manufacturing oxide etch, and extends the study to multilevel oxide etch. We observe significant profile modulation by total flow rate, local deposition, and temperature, agreeing with other studies’ conclusions for high-powered single-wafer etcher. Besides, our experimental results indicate that 3D contact and via profiles are more vertical than 2D trench profiles with the same critical dimension, and smaller features are more vertical than larger ones. With the same aspect ratio, we notice that 2D trenches etch faster than 3D vias. By varying deposition rate, we enable trenches to etch either faster or more slowly than open sites, though vias always have a lower etch rate than open sites. Based on our results, we conclude that submicron oxide etch is solid-angle dependent.