Reactive facet sputtering of SiO2 using CF4 in Ar was conducted in a magnetically enhanced, single-wafer, parallel plate plasma system. Scanning electron microscope (SEM) evaluation of profiles generated after sputtering showed that the faceting effect was lost at concentrations higher than 4% CF4 in Ar. Addition of CF4 increased the etch rate as well as improved the etch uniformity. Fourier transform infrared (FTIR) evaluation of the sputtered film showed no adverse effects due to the presence of CF4 in the reaction medium.