The electrical properties of oxide layers grown on Si in N2O ambient were found a function of oxide growth temperature and oxide thickness. In general, the properties of the oxide were improved when the oxide growth temperature was 1150-degrees-C and higher. The parameters of interest were oxide fixed charge density, leakage current, and stress induced degradation. The degradation in 10 nm oxide was found less compared with that in 7 nm oxide. The formation of more silicon-nitrogen bonds at higher growth temperature and subsequent reduction in silicon-oxygen bonds were used to explain the observations.