A novel fabrication process for monolithic, electrically isolated diamond resistors is discussed. Selective growth of p-type diamond resistors on undoped diamond has been accomplished by using SiO2 as a sacrificial, "lift-off" layer. Diamond resistors with linewidths less than 10 mu m exhibited resistivities of 10 to 20 Omega-cm. No measurable leakage between the resistors or to the substrate was observed.