Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications

Cheulhwan Kim; Jae Young Kim; Kanghuck Lee; Sun Young Jung; Dong-Jin Yun; Tae Kyu An; Hwa Sung Lee; Yong Jin Jeong; Jihoon Lee

Journal of Industrial and Engineering Chemistry, Vol.85, 111-117, May, 2020

DOI10.1016/j.jiec.2020.01.031 Export Citation

Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications

Cheulhwan Kim¹, Jae Young Kim², Kanghuck Lee¹, Sun Young Jung², Dong-Jin Yun³, Tae Kyu An^{1, 4, †}, Hwa Sung Lee^{5, †}, Yong Jin Jeong^{2, †}, and Jihoon Lee^{1, 4, †}

¹Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
²Department of Materials Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
³Analytical Engineering Group, Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
⁴Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
⁵Department of Materials Science and Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan-si, Gyeonggi-do, 15588, Republic of Korea

E-mail:, , ,

In this study, a new functional thiol with a pentafluorophenyl group was synthesized for the surface modification of CdSe quantum-dot floating layers; this was aimed at the fabrication of organic field-effect transistors (OFETs). The dipole moments and surface properties of the fluorinated thiols were used to control the transistor operations; these thiols acted as surface modifiers of the CdSe quantum-dot floating layers in the OFETs. Further, the new functional thiol exhibited a larger dipole moment than that of the commercial 2,3,4,5,6-pentafluorothiophenol. The OFET comprising the new functional thiol with the pentafluorophenyl group functioned as a normally ON transistor and exhibited bistable current states during nondestructive reading. In addition, it exhibited sensitive responses to electrical-only and lightonly biases, which demonstrates its feasibility for light-responsive flash memory applications.

Keywords:Optical transistor memory;CdSe;Quantum dots;Fluorinated thiol;Dipole moment;Photo-induced recovery

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[2] Guo YL, Di CA, Ye SH, Sun XN, Zheng J, Wen YG, Wu WP, Yu G, Liu YQ, Adv. Mater., 21(19), 1954 (2009)

[3] Sun C, Lin Z, Xu W, Xie L, Ling H, Chen M, Wang J, Wei Y, Yi M, Huang W, J. Phys. Chem. C, 119, 18014 (2015)

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[8] Jeong YJ, Yoo EJ, Kim LH, Park S, Jang J, Kim SH, Lee SW, Park CE, J. Mater. Chem. C, 4, 5398 (2016)

[9] Zhou Y, Zhou L, Yan Y, Han ST, Zhuang J, Sun QJ, Roy VAL, J. Mater. Chem. C, 5, 8415 (2017)

[10] Zhou Y, Han ST, Chen X, Wang F, Tang YB, Roy VA, Nat. Commun., 5, 4720 (2014)

[11] Jeong YJ, Yun DJ, Kim SH, Jang J, Park CE, ACS Appl. Mater. Interfaces, 9, 11759 (2017)

[12] Jeong YJ, Yun DJ, Noh SH, Park CE, Jang J, ACS Nano, 12, 7701 (2018)

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[15] Han ST, Zhou Y, Zhou L, Yan Y, Huang LB, Wu W, Roy VAL, J. Mater. Chem. C, 3, 3173 (2015)

[16] Wang Y, Lv Z, Liao Q, Shan H, Chen J, Zhou Y, Zhou L, Chen X, Roy VAL, Wang Z, Xu Z, Zeng YJ, Han ST, Adv. Mater., 30, 180032 (2018)

[17] Lv Z, Chen M, Qian F, Roy VAL, Ye W, She D, Wang Y, Xu ZX, Zhou Y, Han ST, Adv. Funct. Mater., 29, 190237 (2019)

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[21] Green M, J. Mater. Chem., 20, 5797 (2010)

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[24] Park M, Jang J, Park S, Kim J, Seong J, Hwang J, Park CE, Appl. Phys. Lett., 100, 102110 (2012)

[25] Campbell JH, Rubin S, Zawodzinski TA, Kress JD, Martin RL, Smith DL, Barashkov NN, Ferraris JP, Phys. Rev. B, 54, R14321 (1996)

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