The growth morphology and growth rate of silicon carbide at the interface between crucibles made, of graphite or of glassy carbon, and liquid silicon have been studied. The growth occurs slowly reaching a layer of similar to 26 mu m on graphite and of similar to 8 mu m on glassy carbon after 48 h at 1500 degrees C. Silicon nitride performed well as crucible material only during short times up to 20 min. Later the melt penetrated into the ceramic body leading to a disintegration of the crucible.