Titanium nitride films obtained by chemical vapor deposition with TiCl4, N-2, and H-2 as gas sources at ambient pressure have been examined in this study The results reveal that the deposition rate increases with increasing H-2 and N-2 partial pressures but has a maximum value with TiCl4, partial pressure. The Arrhenius plots show that the transition temperature from surface limited to diffusion limited is greatly influenced by H-2, N-2, and TiCl4 partial pressures. The film microstructure was characterized by scanning electron microscopy (SEM) and x-ray diffraction (XRD). It is found that the change of topography and microstructure of TiN films responds to deposition temperature and gas concentration used. The diffusion rate of as-deposited atoms and the total surface energy are considered as the determinant factors for the change. The growth texture of TiN films was indentified to be [422] at lower deposition temperature and [200] at high temperature. The mechanisms for texture formation are discussed.