A detailed kinetic modeling for SiH4/H-2 surface reactions on Si(111)-(7 x 7) surface during chemical vapor deposition is presented. Based on the conservation of adsorbed species at steady state, an analytical expression for growth rate (GR) as a function of surface temperature, silane and hydrogen partial pressures is derived. By curve fitting to previously reported experimental values, preexponential coefficients and activation energies in the GR formula are further derived. Predictions of Gr, E(app), and T-tr under different growth parameters are given and compared to literature values. The model is further extended to SiH4/H-2 mixture surface reactions thus the reaction orders of SiH4 and H-2 are predicted. Good agreements with literature values are obtained under low pressure conditions.